Irf540n datasheet 1n4001

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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I72 ® All the part names for which the file 1N4004-TB.pdf is a datasheet IRF540 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRF540 MOSFET. IRF540Z IRF540ZS IRF540ZL D2Pak IRF540ZS TO-220AB IRF540Z TO-262 IRF540ZL Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current P D @T C = 25°C Power Dissipation W Linear Derating Factor W/°C V GS Gate-to ...
 

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BUZ 80 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 80 800 V 3.1 A 4 Ω TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 °C ID 3.1 A Pulsed drain current TC = 25 °C IDpuls 12.5 BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BC546 BC547 BC548 VCEO 65 45 30 Vdc Collector - Base Voltage BC546 BC547 BC548 VCBO 80 50 30 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Collector Current ...
 

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IRF540N : 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET. Intersil Corporation. Your require pages is cannot open by blow. Reason : Connect this pages through directly deep link. alldatasheet.com is Free datasheet search site. You can use All semiconductor datasheet in Alldatasheet, by No Fee and No register. IRF540NPbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse

PARAMETER TEST CONDITIONS SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT Maximum instantaneous forward voltage 1.0 A VF 1.1 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C IR 5.0 μA TA = 125 °C 50 Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) IRF540, IRF540 N-Channel MOSFET Transistor, buy IRF540 Transistor IRF540 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRF540 MOSFET.

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N-channel TrenchMOS transistor IRF540, IRF540S REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IS Continuous source current - - 23 A (body diode) ISM Pulsed source current (body - - 92 A diode) VSD Diode forward voltage IF = 28 A; VGS = 0 V - 0.94 1.5 V small signal pnp transistor preliminary data silicon epitaxial planar npn transistor to-92 package suitable for through-hole pcb assembly the npn complementary type is 2n3904 applications well suitable for tv and home appliance equipment small load switch transistor with