Datasheet 2n3055g

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2N3055G Inventory, Pricing, Datasheets from Authorized Distributors at ECIA. Instant results for 2N3055G.
 

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The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. Excellent safe operating area DC Current gain(hFE = 20 to 70 at Ic = 4ADC) The 2N3055 is a NPN Epitaxial-Base Planar Transistor that normally comes encapsulated in a metal Jedec TO-3 package. The basic application range include power switching, high fidelity amplification, shunt regulation, and forming the output stages of various power circuits. The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. Excellent safe operating area DC Current gain(hFE = 20 to 70 at Ic = 4ADC) 2N3055/D 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Maximum ratings are those values beyond which device damage can occur. Oct 26, 2018 · The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices. Catalog Datasheet MFG & Type PDF Document Tags; 2N3055G. Abstract: MJ2955 2n3055 200 watts amplifier diagram MJ2955G TO-204AA transistor OF transistor 2n3055 to-3 package MJ-20 power transistor mex MJ2955 data transistor 2n3055 2N3055
 

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2N3055G Complementary Silicon Power Transistors . Complementary silicon power transistors are designed for general-purpose switching and amplifier applications.. DC Current Gain - hFE = 4 Adc Collector-Emitter Saturation Voltage -. Compare pricing for ON Semiconductor 2N3055G across 27 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart. The complementary PNP transistor to the 2N3055G is the MJ2955G. Replacement and equivalent transistor for the 2N3055G. You can replace the 2N3055G with the 2N3055, ... pulse limits are valid for duty cycles to 10% but must be. derated for temperature according to Figure 1. Html Pages 1 2 3 4 Datasheet Download

Compare pricing for ON Semiconductor 2N3055G across 27 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart. The 2N3055 is a NPN Epitaxial-Base Planar Transistor that normally comes encapsulated in a metal Jedec TO-3 package. The basic application range include power switching, high fidelity amplification, shunt regulation, and forming the output stages of various power circuits. The Intertek calibration service provides the assurance that your instruments perform as stated in the datasheet. Calibration involves comparing the read values of a measuring instrument or data recorder with the corresponding values of a reference tool that meets the reference standards. Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor Text: ) IC , COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8.

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The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. Replacement and equivalent transistor for the 2N3055. You can replace the 2N3055 with the 2N3055A, 2N3055AG, 2N3055G, 2N3055H, 2N5039, 2N5630, 2N5671, ...