2n5551 smd datasheets

Dawn sheets

2N5551 NPN General Purpose Amplifier . This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.. VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage. TO- 92 Plastic Package NPN Silicon Planar Epitaxial High Voltage Transistor Application High Voltage, General Purpose,Telephony Device Types 2N5551 160V, 600mA CMBT5551 SOT23 SMD 160V, 600mA See the data sheet for 2N5551 and for CMBT5551 2N5551 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg-55~150 °C
 

Superking flat sheet

2N5551 MMBT5551. NPN General Purpose Amplifier. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2n5401 smd datasheet, cross reference, circuit and application notes in pdf format. ... SMD 2N5551, SMD Positive Voltage Regulator Positive Voltage Regulator , ... May 01, 2018 · Note: Complete Technical Details can be found at the S8050 datasheet given at the end of this page. Complementary PNP Transistors. S8550 . Alternative NPN Transistors. S9014, MPSA42, SS8050, BC547, 2N3904, 2N2369, 2N3055, 2N3904, 2N3906 . S8050 Equivalent Transistors. 2N5830, S9013 . Brief Description on S8050 April 2011 Doc ID 018729 Rev 1 1/10 10 2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oC Nov 24, 2019 · MMBT5551 SOT-23 2N5551 SMD NPN High Voltage Transistor G1 Marking The items you ordered will be shipped out in 2 business day by Air Mail when your payment is clear. Email to friends Share on Facebook – 2n551 in a new window or tab Share on Twitter – opens in a new window or tab Share on Pinterest – opens in a new window or tab Add to ... C1815, C1815 Datasheet, C1815 NPN General Purpose Transistor Datasheet, buy C1815 Transistor 2N5551- MMBT5551 Rev. B 2N5551- MMBT5551 NPN Ge neral Purpose Amplifier tm April 2006 2N5551- MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) SMD Equivalent The SMD versions of the 2N5551 are available as the 2N5551S (SOT-23), DXT5551 (SOT-89), DZT5551 (SOT-223), KST43 (SOT-23), KST5551 (SOT-23), MMBT5551 (SOT-23) and PMBT5551 (SOT-23).
 

K1202 datasheet 2n3904

June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA,... Document ID Release date Data sheet status Change notice Supersedes 2N7002 v.7 20110908 Product data sheet - 2N7002 v.6 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. 2N5551 VBE(sat) − − − 1.0 1.2 1.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 100 300 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 6.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N5550 2N5551 Cibo − − 30 20 pF Small−Signal Current Gain

2n3904 small signal npn transistor preliminary data silicon epitaxial planar npn transistor to-92 package suitable for through-hole pcb assembly the pnp complementary type is 2n3906 applications well suitable for tv and home appliance equipment small load switch transistor with October 2007 Rev 3 1/8 8 2SB772 PNP medium power transistor Features High current Low saturation voltage Complement to 2SD882 Applications Voltage regulation Relay driver Document ID Release date Data sheet status Change notice Supersedes 2N7002 v.7 20110908 Product data sheet - 2N7002 v.6 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate.

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2N5551- MMBT5551 Rev. B 2N5551- MMBT5551 NPN Ge neral Purpose Amplifier tm April 2006 2N5551- MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) 2N5401 Datasheet, 2N5401 PDF, 2N5401 Data sheet, 2N5401 manual, 2N5401 pdf, 2N5401, datenblatt, Electronics 2N5401, alldatasheet, free, datasheet, Datasheets, data ...