Semiconducting graphene sheet

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Carbon nanotubes can be either metallic or semiconducting, depending on the angle the graphene sheet from which they are made is rolled. Graphene is basically a metal. Semiconducting nature of the oxygen-adsorbed graphene sheet Jun Ito, Jun Nakamura,a and Akiko Natori Department of Electronic-Engineering, The University of Electro-Communications (UEC-Tokyo), 1-5-1 Dec 14, 2015 · This article reviews the research on the use of graphene and related materials in the photoanode of dye-sensitized solar cells (DSSCs). Graphene-based materials, such as pristine graphene, graphene oxide, and reduced graphene oxide, have properties attractive for various components of the DSSC photoanode. The surface properties of graphene are possible to be adjusted via structural alteration including chemical doping, chemical functionalization, and controlled reduction, which proposes remarkable prospects for the development of graphene-based semiconducting materials with unique electronic characteristics.
 

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The physical mechanism for controlling the electronic properties of graphene by BN doping is discussed in detail and this looks like a promising way for making semiconducting graphene for ... When a single (or many) sheet (one atom thick) of graphene are rolled to make a cylindrical structure, then the resulting structure will be called a carbon nanotube (CNT). The current chapter presents a study of recent research on semiconducting/graphene nanocomposites. The first part presents different methods to synthesize graphene and graphene oxide (GO) and to change GO to reduced graphene oxide (rGO). In addition, different techniques usually applied to characterize GO and rGO are introduced. The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons and from acoustic phonons are as important as line-edge roughness We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet. Apr 19, 2017 · They then grew semiconducting material over the graphene layer. They found that graphene is thin enough to appear electrically invisible, allowing the top layer to see through the graphene to the underlying crystalline wafer, imprinting its patterns without being influenced by the graphene.
 

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Nov 26, 2014 · "These results provide a better understanding of the crystallization of semiconducting polymers on graphene and should help the design of more efficient graphene based organic devices by control ... A method of fabricating a semiconducting device is disclosed. A graphene sheet is formed on a substrate. At least one slot is formed in the graphene sheet, wherein the at least one slot has a width that allows an etchant to pass through the graphene sheet. Apr 02, 2018 · Graphene is an allotrope of carbon that exists as a two-dimensional sheet. One way to think of graphene is as a single layer of graphite, where all the carbons exist in a regular hexagonal array. Being composed of carbon makes graphene a non-metal, but it possesses semiconducting properties that means it often characterized as a quasi-metal.

The intrinsic strength and critical fracture strain of (4, 8) carbon sheet are chirality dependent and very much comparable to graphene. Thus semiconducting (4, 8) carbon sheet can be a very promising material for electronics and photonics applications. Acknowledgments Graphene Optical Switch Based on Charge Transfer Plasmons Arash Ahmadivand,* Burak Gerislioglu, and Nezih Pala In the past decade, dynamic, tunable, compact, and fast plasmonic switches with high modulation depth (MD) and low losses have been developed successfully for various practical applications. Here, using a simple

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The surface properties of graphene are possible to be adjusted via structural alteration including chemical doping, chemical functionalization, and controlled reduction, which proposes remarkable prospects for the development of graphene-based semiconducting materials with unique electronic characteristics. To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal‐catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates.